copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 features high ruggedness r ds( on ) (max 1.32 ? )@v gs =10v gate charge (typical 28nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel to - 220f mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 7* a continuous drain current (@t c =100 o c) 4.4* a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 172 mj e ar repetitive avalanche energy (note 1) 48 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 28.6 w derating factor above 25 o c 0.2 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 4.41 o c/w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 47.1 o c /w 1/5 *. drain current is limited by junction temperature. bv dss : 600v i d : 7a r ds(on) :1.32 SW7N60H samwin 1 2 3 item sales type marking package packaging 1 sw f 7n60 SW7N60H to - 220f tube order codes 1. gate 2. drain 3. source 1 2 3 to - 220f
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.6 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 1 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 4 v r ds(on) drain to source on state resistance v gs =10v, i d = 3.5a 1.1 1.32 ? g fs forward transconductance v ds = 30 v, i d = 3.5a 5.5 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 1073 pf c oss output capacitance 87 c rss reverse transfer capacitance 15 t d(on) turn on delay time v ds =300v, i d =7a, r g =25? (note 4,5) 15 25 ns tr rising time 30 50 t d(off) turn off delay time 69 100 t f fall time 31 50 q g total gate charge v ds =480v, v gs =10v, i d =7a (note 4,5) 28 40 nc q gs gate - source charge 6 q gd gate - drain charge 12 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 7 a i sm pulsed source current 28 a v sd diode forward voltage drop. i s =7a, v gs =0v 1.5 v t rr reverse recovery time i s =7a, v gs =0v, di f / dt =100a/us 289 ns q rr reverse recovery charge 3.1 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 7mh, i as = 7a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 7a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW7N60H samwin 2/5
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 fig. 1. on - state characteristics 3/5 SW7N60H samwin fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 SW7N60H samwin 4/5 fig. 7. maximum safe operating area fig. 8. transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9 . gate charge test circuit & waveform fig. 10 . switching time test circuit & waveform v ds same type as dut dut v gs 2ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. feb. 2014. rev. 1.0 fig. 11 . unclamped inductive switching test circuit & waveform 5/5 SW7N60H samwin fig. 12 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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